Abstract
In recent years, the dichalcogenide MoS2 has gained attention as an interesting material system for basic research and possible optoelectronic applications. Here, we report on optical spectroscopy of few- and single-layer MoS2 flakes. We use Raman spectroscopy to characterize our samples. The energy of the characteristic phonon modes in MoS2 depends on the number of layers, so that the thickness of individual flakes can be mapped in scanning Raman experiments. While bulk MoS2 is an indirect-gap semiconductor, single-layer MoS2 has a direct band gap and emits strong photoluminescence. We investigate the photoluminescence in single-layer MoS2 for different experimental conditions. Additionally, we study the photocarrier dynamics in time-resolved photoluminescence experiments.
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