Abstract
AbstractWe have investigated the optical properties of lowly strained GaInAs quantum dots (QDs). The structures were grown for a constant nominal GaInAs layer thickness but varying content (strain) from below to far above the critical thickness conditions. In order to investigate the properties of such an uncommon QD system, photoreflectance (PR) and photoluminescence, combined with scanning electron microscopy, have been used. Optical transitions connected with the ternary layer have been observed and followed from the lowest content quantum well case through the transformation into 3D islands on the wetting layer (WL) and a coexistence of the QD‐related and WL‐related transitions. Due to the observation of both heavy hole and light hole related transitions in PR spectra, the thickness of the wetting layer versus changed indium content could be determined by comparing the experimental data with the results of the effective mass envelope function calculations. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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