Abstract
Optical characterisation of GaAs/AlGaAs quantum well infra-red photodetector (QWIP) structures by interband photoluminescence (PL) spectroscopy has been performed. The effect on the low temperature PL spectrum of both the doping concentration in the wells and the presence of thin lateral barriers is analysed. In addition to the main peak (e1-hh1), a second peak at lower energy is observed in doped structures and attributed to a donor-to-acceptor transition. The broadening of the e1-hh1 peak when the doping in the wells is increased is interpreted in terms of the bandfilling effect in the wells. An additional broadening appears when thin lateral barriers with higher content are introduced in the structure. Responsivities as high as 0.5 A/W without external coupling mechanisms of the incident light have been measured in samples showing the above-mentioned features in the PL spectra.
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