Abstract
AbstractWe use cathodoluminescence and Raman spectroscopy to investigate GaN layers grown by plasma‐assisted molecular beam epitaxy with different Bi fluxes. We find that the growth of GaN with an additional Bi flux favours the formation of submicron cubic domains, which results in layers with reduced crystalline quality and lower luminescence emission. We detect a Bi‐related Raman feature at low frequencies that we tentatively assign to local Bi modes in GaN, which indicates that a fraction of Bi atoms incorporates into the GaN lattice. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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