Abstract
We report optical characterisation of AlGaN epitaxial layers and GaN/AIGaN quantum wells, grown by metalorganic vapour phase epitaxy on sapphire substrates. A combination of emission (photoluminescence) and absorption (photoluminescence excitation) spectroscopy provides information on the nature of the electronic states and on built-in electric fields resulting from piezoelectric and spontaneous polarisation effects. These fields are found to be considerably smaller than in previously reported work on similar structures.
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