Abstract
AbstractWe report on the fabrication of mirror‐like facets on GaN‐based laser structures, using a conventional RIE system and photoresist AZ 5214 as the etch mask. The roughness of the etched sidewalls is below 100 nm and the slope is practically vertical. For enhanced material protection during plasma etching, we describe an alternative lithography procedure with a double photoresist layer. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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