Abstract
ABSTRACTThe near surface regions of high purity silica glass discs, Spectrosil A, were modified by implantation with bismuth ions at 160 keV and room temperature. The glasses implanted with a nominal dose of 6×1016 Bi/cm2 at ∼5 μA/cm2 were subsequently bleached with a 5.0 eV KrF pulsed excimer laser. The laser had an average pulse duration of -20 ns and repetition rate of 10 Hz. It was found that the bleaching was dependent upon the power density of the laser for a constant total integrated energy. Ion backscattering and optical absorption measurements were made before and after laser irradiation. Large changes in optical density and depth distribution of the implanted ions were observed at power densities of ≥45 mJ/cm2-pulse. On the basis of our experimental results, the onset of the threshold for bleaching of silica glass implanted with 6×1016 Bi/cm2 at 160 keV and at room temperature is between 30 and 45 mJ/cm2-pulse.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
