Abstract
Optical bistability in semiconductor laser amplifiers is particularly interesting because of the gain provided by the device. Small changes, in input power can result in large changes in amplifier gain, and this leads to possible applications in all-optical regenerators for transmission systems. Other possible applications include their use as optical switches and logic elements.1 Optical bistability in GaAs laser amplifiers operating at 850 nm has been reported previously.2 Here we report for the first time measured results at 1.5 μm with an InGaAsP device.
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