Abstract
Optical bistability is observed in cw-operating InGaN-based laser diodes including a saturable absorber (SA) section. The dependence of the light-current hysteresis on the SA section length and reverse bias (VSA) has been studied. An analytical approach is developed to estimate the carrier lifetime τa in the SA section from the measurements of the hysteresis width, which leads to τa=1.9 ns at zero bias. τa is found to decrease rapidly for higher reverse biases and a minimum of τa=0.4 ns is interpolated for flatband conditions. We explain the dependence of the carrier lifetime on VSA via the modification of the quantum-confined Stark effect.
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