Abstract
We demonstrate optical bistability (OB) in a defect slab doped V-type four-level InGaN/GaN quantum dot nanostructure in the negative refraction frequency band. It has been shown that the OB behavior of such a quantum dot nanostructure system can be controlled by the amplitude of the driving fields and a new parameter for controlling the OB behavior as thickness of the slab medium in the negative refraction band. Meanwhile, we show that the negative refraction frequency band can be controlled by tuning electric permittivity and magnetic permeability by the amplitude of the driving fields and electron concentration in the defect slab doped. Under the numerical simulations, due to the effect of quantum coherence and interference, it is possible to switch bistability by adjusting the optimal conditions in the negative refraction frequency band, which is more practical in all-optical switching or coding elements, and technology based nanoscale devices.
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