Abstract
The optical band gap of electron-beam-evaporated silicon films doped with antimony and boron is determined in both amorphous and microcrystalline structures. The value in the amorphous structure is 1.5 eV for the Sb-doped case, the same as the intrinsic case, while for B-doping, the gap is sharply decreased to 1.0 eV. For the microcrystalline structure, the values are all 1.7 eV for Sb- and B- doped cases as well as the intrinsic case.
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