Abstract
The excess optical attenuation at wavelengths around 1550nm induced by subamorphous dose ion implantation of silicon-on-insulator rib waveguides has been quantified. Optical attenuation is related to the introduction of lattice defects such as the silicon divacancy. After 2.8MeV Si+ implantation at a dose of 2.5×1014cm−2, the attenuation is greater than 1000dBcm−1. Using positron annihilation spectroscopy to determine the vacancy-type defect concentration, it is demonstrated that the absorption component of the excess attenuation can be predicted using a simple analytical expression. Additional losses are suggested to result from a defect induced change in the real part of the refractive index of the silicon waveguide. A processing strategy for ensuring that the absorption component dominates the excess attenuation is described, and it is shown that selective implantation of a relatively low dose of inert ions is an efficient method for the reduction of optical cross talk in silicon photonic circuits.
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