Abstract
Abstract Achieving a low yield of In2O3SnO2 thin film nanostructures during the production of optoelectronic semiconductors is easy. A newly designed optical assistance module uses excimer irradiation in the deep ultraviolet to assist in the micro electro-removal process in a nano-scale recovery process for flexible display panels. The method effectively removes defective In2O3SnO2 nanostructures from the surface of the optical PET-film (PET) of e-paper and allows the substrate to be returned to the production line. This study uses 172-nm excimer light to promote the efficient removal of In2O3SnO2 nanostructures by the etching process. The excimer irradiation enhances the removal of the In2O3SnO2 thin film which is easily broken into nano-particles and removed from the PET substrate quickly and cleanly. The time required for the etching process using excimer irradiation is shorter when compared to the time taken without irradiation under similar processing conditions. It was also shown that excimer irradiation is absolutely necessary to promote the etching effect with the designed tool to efficiently strip away the In2O3SnO2 nanostructures.
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