Abstract
The electric field-induced in-plane optical anisotropy (Pockels effect) of ZnSe/BeTe multi-layered heterostructures has been studied by analysing the linear polarization of the spatially indirect photoluminescence. A pronounced quantum-confined Pockels effect was found in ZnSe/BeTe double-barrier structures. A tight-binding model is proposed which consistently interprets the experimental findings and suggests a new mechanism for the effect as realized in type-II heterostructures. The model takes into account that the ZnSe/BeTe heterosystem exhibits a type-II band alignment with large band offsets and that in the zinc-blende lattice the chemical bonds are oriented in 〈111〉 directions and, when shifted along the [001] principal axis, alternatively change their orientation in the (001) plane from [1 1 0] to [110] and vice versa. A light-emitting diode based on a single ZnSe/BeTe interface is demonstrated.
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