Optical anisotropy in wire-geometry SiGe layers grown by gas-source selective epitaxial growth technique

Abstract

We report on the successful fabrication of SiGe quantum wire structures on a V-groove patterned substrate by gas-source selective epitaxial growth technique, and their optical properties. Optical anisotropy, showing the realization of luminescent SiGe layers with wire geometry, was clearly observed in electroluminescence from the SiGe layers grown inside the groove.