Abstract
In this paper, we present the results of polarization-dependent micro-photoluminescence (µ-PL) measurements of InAs quantum dots (QDs) selectively formed on GaAs pyramidal structures by selective area metalorganic vapor phase epitaxy. Under nonresonant excitation, strong optical anisotropy is observed in the PL spectra of the InAs QDs. Under near-resonant excitation, where the excitation energy is close to the wetting layer luminescence, the linear polarization degree of InAs QD is larger than that observed under nonresonant excitation. When excited and detected lights have the same polarization along two <110> directions, the PL is intense. However, in the cross polarization configurations, the PL intensities are very weak. The observed strong optical anisotropy in InAs QDs formed on GaAs pyramids under nonresonant excitation can be attributed mainly to the asymmetry of the QD potential which results from the anisotropic strain relaxation and shape of QDs, while that under the near-resonant excitation is explained by the hot photoluminescence effect.
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