Abstract
The characterization of growth features and defects in various high-pressure high-temperature (HPHT) synthetic diamonds has been achieved with optical and X-ray topographic techniques. For the X-ray studies, both characteristic and synchrotron radiation were used. The defects include dislocations, stacking faults, growth banding, growth sector boundaries, and metal inclusions. The directions of the Burgers vectors of many dislocations (edge, screw, and mixed 30°, 60°, and 73.2°), and the fault vectors of stacking faults, were determined as <110> and 1/3 <111> respectively. Some dislocations were generated at metallic inclusions; and some dislocations split with the formation of stacking faults.
Highlights
The purpose of these studies was to characterize the various growth features and defects in some specimens of synthetic high-pressure high-temperature (HPHT) diamonds grown by the reconstitution technique [1,2,3]; and to identify Burgers vectors of dislocations and fault vectors of stacking faults
Quantitative polarizing polarizing microscopy microscopy has been successfully successfully applied applied to measure and and to to map map the the Quantitative has been to measure variations in birefringence across several
X-ray topographic methods have have been been employed employed to to locate locate dislocations dislocations in in these these diamonds, diamonds, which which showed showed that that the the methods dislocations grew radially from the centre of each diamond into regions of relatively low dislocations grew radially from the centre of each diamond into regions of relatively low birefringence; birefringence; the result that dislocations appeared with the result with that dislocations appeared to relieve strain.to relieve strain
Summary
The purpose of these studies was to characterize the various growth features and defects in some specimens of synthetic high-pressure high-temperature (HPHT) diamonds grown by the reconstitution technique [1,2,3]; and to identify Burgers vectors of dislocations and fault vectors of stacking faults. The interesting objects for investigations of this kind are large synthetic diamonds (several millimetres in diameter) grown by the reconstitution method The progress in this technique has made possible the routine growth of such diamonds with relatively low concentrations of dislocations and metallic inclusions.
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