Abstract
We present a theoretical and experimental study of the properties of highly acceptor-doped quantum wells (QWs), with doping levels varying from 9 × 10 9 to 6 × 10 12 cm −2. From variable temperature Hall measurements it is found that the temperature dependence of the mobility differs remarkably from p-type bulk GaAs, as well as n-type QWs. For the moderately doped ( N A < 3 × 10 11cm −2) sample, the mobility is almost constant with temperature up to ∼ 100K, while the 2D hopping conduction dominates in the same temperature range for the degenerate samples. The activation mechanism involved in the investigated structure can be understood in terms of the change of the subband structure due to the central doping. Steady-state photoluminescence (PL) and PL excitation results are compared with theoretical predictions involving exchange and correlation effects for the electron-hole system and their interaction with acceptor ions. We finally report on the survival of the excitons well above the degenerate limit, due to inefficient screening in the 2D case.
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