Abstract
Single crystals of Sb2-xInxTe3 (x = 0.0-0.4) were prepared from the elements of 5N purity using the modified Bridgman method. On the samples with a various content of incorporated In-atoms the optical properties (reflectivity, transmission) in IR region and the transport coefficients (electrical conductivity σ⊥c, Hall coefficient RH(B || c), Seebeck coefficient S⊥c) were measured. The results showed that the In-atoms incorporated in Sb2Te3 crystal lattice suppress the free carrier concentration. The observed decrease in the hole concentration with increasing content of incorporated In-atoms was explained by the interaction of incorporated In-atoms with antisite defects Sb'Te. The increasing concentration of incorporated In-atoms in the crystal lattice leads to the increase of the bond polarity and to the increase of ionicity of the studied mixed crystals. The consequence of these changes is the decrease of antisite defect concentration.
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