Abstract
CdSe crystals were grown by the seeded physical vapor transport method with helium on CdS 0.67Se 0.33 seeds. A CrSe source was used for doping of both the CdSe and CdS 0.67Se 0.33 seed crystals with chromium during growth. An absorption peak in the near-IR range of 1.5–2.2 μm associated with the intracenter 5T 2→ 5E transitions of Cr 2+ ions was realized. The Cr 2+ concentration in the various samples was calculated using the experimentally obtained peak values of the absorption coefficients, and it was found to vary from 10 17 to 3×10 18 cm −3. A ‘blue’ shift of the Cr 2+-related near-IR absorption band maximum in CdS 0.67Se 0.33 relatively to the CdSe matrix was demonstrated for the first time. The measured Hall mobility of charge carriers in CdSe crystals with Cr concentration at a level of 2×10 18 cm −3 reached a maximum value of 6000 cm 2/V s at 50 K.
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