Abstract
The surface morphology modification and optical property modification of semi-insulating gallium arsenide sample implanted with 100 keV silicon ions with the fluences ranging between 5 × 10[Formula: see text] and 4 × 10[Formula: see text] ion cm[Formula: see text] were analyzed using scanning electron microscopy and UV–Vis–NIR spectroscopy study. Scanning electron microscopy study revealed pore-like structure formation on the surface of gallium arsenide samples after silicon ion implantation. The size of these pore-like structures was found to increase with increasing ion fluence. Energy dispersive X-ray analysis showed an increase in silicon concentration in the gallium arsenide sample after silicon ion implantation with increasing ion fluence. The UV–Vis–NIR spectroscopy study revealed a decrease in optical transmission for silicon ion implanted gallium arsenide sample with increasing ion fluence. An additional absorption band was observed for the gallium arsenide sample implanted with the highest fluence (4 × 10[Formula: see text] ion cm[Formula: see text]. Urbach tail energy was found to increase with respect to ion fluence.
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