Abstract
Highly oriented and transparent ZnO thin films have been fabricated on ultrasonically cleaned quartz substrates by the sol-gel technique. X-ray diffraction, UV-VIS, FTIR, photoluminescence and SEM are used to characterize ZnO thin films. X-ray diffraction study show that all the films prepared in this work have hexagonal wurtzite structure, with lattice constants a = b = 3.260 A, c = 5.214 A. The optical band gap energy of the thin films is found to be direct allowed transition ~3.24 eV. The FTIR spectrum of the film has the characteristics ZnO absorption band at 482 cm −1 . The photoluminescence spectrum of the samples has an UV emission peak centred at 383 nm with broad band visible emission centred in the range of 500 - 600 nm.
Highlights
Significant research efforts have been made in recent years for developing highly oriented and transparent ZnO thin films, because of their potential application in transparent electrode in display, window layers in solar cells, field emitters, ultraviolet laser emission, photodetectors, piezoelectricity, bio-sensors, short wavelength light emitting diode and information technology [1,2,3,4,5,6,7,8]
Oriented and transparent ZnO thin films have been fabricated on ultrasonically cleaned quartz substrates by the sol-gel technique
ZnO thin films are grown by different techniques such as pulsed laser deposition (PLD), magnetron sputtering, MOCVD, spray pyrolysis etc [9,10,11,12]
Summary
Significant research efforts have been made in recent years for developing highly oriented and transparent ZnO thin films, because of their potential application in transparent electrode in display, window layers in solar cells, field emitters, ultraviolet laser emission, photodetectors, piezoelectricity, bio-sensors, short wavelength light emitting diode and information technology [1,2,3,4,5,6,7,8]. A II-VI group semiconductor material ZnO has wide band gap (~3.3 eV at room temperature) and large excitonic binding energy ~60 meV. Due to their unique optical, electrical and semiconducting properties, ZnO thin films are extensively used in various applications. The structural and physical properties of ZnO thin films prepared by sol-gel technique using various inorganic and organic precursors at different deposition conditions have been reported in literature [13,14]. We report growth of ZnO thin films on quartz substrate by Sol-gel method using zinc acetate precursor and their structural, optical, vibrational and photoluminescence properties
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