Abstract
We have grown ZnCdSe/ZnSSe/ZnMgSSe separate confinement heterostructures by molecular-beam epitaxy. Strain on the ZnSSe layer is calculated from x-ray and photoluminescence data. The temperature dependence of band-gap energy and the photoluminescence intensity in the Cl-doped ZnCdSe active layers is compared with that of undoped ones.
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