Optical and structural properties of the GaAs heterostructures grown using AlGaAs superlattice buffer layer on compliant Si(100) substrates with the preformed porous-Si (por-Si) layer.

D Zolotukhin,Y Hudyakov,I Arsentyev,O Radam Ali,A Lenshin,H Leiste,P Seredin,D Goloshchapov

doi:10.1088/1742-6596/2086/1/012046

Abstract

360 nm and 700 nm thick GaAs layers were grown by MO MOCVD growth technique directly on compliant Si (100) substrate and on supper-lattice (SL) AlGaAs buffer layer. The XRD study revealed better structural quality for the sample grown on SL / por-Si buffer. AFM study revealed a smoother sample surface with blocks of more regular rectangular shape and larger size as well. Photoluminescence spectra of the samples revealed an energy shift of PL maximum intensity for both samples. Sample grown on SL buffer also showed higher PL intensity corresponding to better crystalline perfection.

Highlights

The integration of the III-V technology with the most developed Si technology is an actual problem for the state of art science
Large lattice and thermal expansion coefficient (TEC) mismatch between Si and GaAs (~120.4% and ~4.1%, respectively) [1] leading to the generation of high density of threading dislocations (TD) and other defects during the growth procedure, which acts as nonradiative recombination centers and affect on terminal-device efficiency and reliability
The difference in thermal expansion coefficients can led to bending of heterostructures which significantly complicates its post-growth processing, and in some cases can lead to delamination of the films from substrates

Summary

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Optical and structural properties of the GaAs heterostructures grown using AlGaAs superlattice buffer layer on compliant Si(100) substrates with the preformed porous-Si (por-Si) layer. - Influence of Bound Metals on the Electrical Properties of Single Molecule Junction Porphyrin-Imides Linked to SWNTs Murni Handayani, Shun Gohda, Hirofumi Tanaka et al. - Lattice strain effects on the structural properties and band gap tailoring in columnarly grown Fe-doped SnO2 films deposited by DC sputtering Y B Guillen-Baca, C A Vilca Huayhua, K J Paz Corrales et al. View the article online for updates and enhancements. View the article online for updates and enhancements This content was downloaded from IP address 129.13.72.196 on 20/01/2022 at 10:47. D Zolotukhin, P Seredin, A Lenshin, D Goloshchapov 1, Y Hudyakov, O Radam Ali, I Arsentyev and H Leiste

Introduction

Published under licence by IOP Publishing Ltd

Results and discussion