Optical and structural properties of single source precursor based pure and Cu-doped antimony sulphide thin films by physical vapour deposition assisted technique

Abstract

Abstract Semiconductor thin films in solar cells have earned much attention in the past few decades in renewable energy production via solar energy. Antimony-Diethyl dithiocarbamate complex of formula [Sb(S2CN(Et)2)n] have been synthesized and utilized as a precursor for the deposition of pure and Copper doped Antimony Sulphide on glass substrates as thin films by using Physical Vapor Deposition method (PVD) via resistive heating unit (RHU). FTIR studies confirmed the development of dithiocarbamate complexes. To the best of our cognition, physical vapour deposition method is applied for the first time in the fabrication of pure and doped Antimony Sulphide thin film.