Optical and structural properties of GaSb-doped Mn based diluted magnetic semiconductor thin films grown via DC magnetron sputtering

Abstract

In this work, diluted magnetic semiconductor GaSb:Mn thin films were grown via DC magnetron Co-sputtering on glass substrates. The effect of synthesis parameters on the optical and structural properties was determined through spectral transmittance measurements and X-ray diffraction (XRD), respectively. Substrate temperature was changed from 373 to 523 K and layer thicknesses were obtained between 200 and 330 nm. All samples were subjected to annealing process to 623 K in situ. It was found that the optical constants (refractive index (n), absorption coefficient (a), extinction coefficient (k), and energy gap (E1)) are significantly affected by the temperature and target power used during the synthesis process. In particular, a variation of the energy gap between 0.58 and 0.98 eV was obtained when the target power of GaSb varied between 80 and 140 W. GaSb, Mn2Sb and SiO2 phases were observed for lowest values of target power, where SiO2 phase is a contribution of the substrate. The dielectric function of the compound with a dependence on synthesis parameters such as, the substrate temperature and deposition time was obtained, both real (e1) and imaginary part (e2). Analysis of the XRD measurements allowed to find that the (GaSb)Mn films grow with a mixture of the GaSb and Mn2Sb phases, and an amorphous halo associated with the glass substrate. A correlation between synthesis parameters and optical properties is presented. Diluted magnetic semiconductors, like GaSb:Mn, are considered among promising materials for the development of new spin-electronic devices, high speed quantum-mechanical in computational information, other more; in this case, studies on magnetic properties in digital alloys of GaSb/Mn can be realized around of the optimization of Curie temperature.