Optical and structural properties of 6H–SiC implanted with silicon as a function of implantation dose and temperature

Abstract

Optical and structural properties of ion-implanted 6H–SiC single crystals were investigated for samples implanted with 370 keV 28 Si ions to doses ranging from 5×10 13 to 1×10 16 cm −2 and at irradiation temperatures ranging from 20°C to 600°C. Rutherford backscattering spectrometry channeling (RBS/C) showed that dynamic recovery of the induced-damage layer increases with temperature. The final disorder determined from RBS/C as a function of implantation temperature was modeled in terms of a thermally activated process which yielded an activation energy of 0.08 eV. RBS/C data on high temperature implantations also suggest that defect complexes are created at high doses in addition to point defects still stable at high temperature. A decrease in Raman intensity of implanted samples relative to that of crystalline samples was observed and correlated with an increase in optical absorption near the wavelength of the laser pump (514.5 nm).