Optical and structural investigations of self-assembled Ge/Si bi-layer containing Ge QDs

Abstract

We report the influence of Si spacer thickness variation (10–40nm) on structural and optical properties of Ge quantum dots (QDs) in Ge/Si(100) bi-layer grown by radio frequency magnetron sputtering. AFM images reveal the spacer dependent width, height, root mean square roughness and number density of QDs vary in the range of ~12–25nm, ~2–6nm, ~1.95–1.05nm and ~0.55×1011–2.1×1011cm−2, respectively. XRD patterns exhibit the presence of poly-oriented structures of Ge with preferred growth along (111) direction accompanied by a reduction in strain from 4.9% to 1.2% (estimated from Williamson–Hall plot) due to bi-layering. The room temperature luminescence displays strong blue–violet peak associated with a blue shift as much as 0.05eV upon increasing the thickness of Si spacer. This shift is attributed to the quantum size effect, the material intermixing and the strain mediation. Raman spectra for both mono and bi-layer samples show intense Ge–Ge optical phonon mode that is shifted towards higher frequency. Furthermore, the first order features of Raman spectra affirm the occurrence of interfacial intermixing and phase formation during deposition. The excellent features of the results suggest that our systematic method may constitute a basis for the tunable growth of Ge QDs suitable in nanophotonics.