Abstract

This paper describes the results of creating a silicon composite doped with ytterbium ions, based on the process of laser-stimulated oxidation of a layer of porous silicon that contains ytterbium nitrate. It presents studies of the transmission spectra and photoluminescence spectra of a layer of ytterbium-ion-doped oxidized porous silicon. The transmission spectra show that the layer of porous silicon is oxidized when the laser acts on the surface of the porous silicon. The photoluminescence spectra demonstrate that ytterbium ions are present in the Yb3+ state. Results are presented of a study of the thermally activated conduction currents of the original porous silicon, of laser-oxidized porous silicon, and of a layer obtained by laser-stimulated oxidation of porous silicon that contains ytterbium nitrate. A comparative study is done of the transformation of the energy spectrum of traps, carried out in the process of laser-stimulated oxidation of a layer of porous silicon in the presence of ions of the rare-earth elements.

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