Abstract
Earth-abundant and non-toxicity quaternary chalcogenide Cu2SrSnS4 is prepared by a facial ball-milling method. Its formation is revealed to be from the reaction between Cu2SnS3 and SrS at 600 °C. The bandgap of the prepared Cu2SrSnS4 film is speculated around 1.78 eV according to absorption test. The carrier lifetime of the prepared Cu2SrSnS4 film is about 2.06 ns. The photocurrent density of the Cu2SrSnS4 film is about 150 μA cm−2 at −670 mV bias vs Ag/AgCl electrode and it repeats after 10 cycles of 1000 s. Its notable generation of photocurrent and photoelectrochemical stability indicates its potential for photoelectric conversion application.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
