Abstract
Data on diamond-like carbon films obtained by deposition from an ion beam formed by a Hall source are presented. The dependences of the film deposition rate on the anode voltage and source current are determined. The ranges of optimal anode current values for the synthesis of antireflective single-layer coatings on germanium and silicon optical elements are found. It is shown that the diamond-like carbon films deposited on both sides of a germanium element ensure a maximum transmittance of 99.6% in the wavelength range of 3–5 μm at a high mechanical strength.
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