Abstract
P-type Cu2FeSnS4 (CFTS) and Cu2ZnSnS4 (CZTS) quaternary chalcogenide films have been grown by the method of spin coating on glass substrates relate to 30 and 40 sccm sulfur flux. Physical properties of obtained samples were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and ultraviolet visible spectroscopy (UV-Vis) to see the effect of deposition parameters on the thin film. The crystal parameters including crystal size, dislocation density and strain value of the samples were changed related to the deposition parameters. XRD results indicated an improvement of the crystalline quality of quaternary chalcogenide CFTS with a maximum crystal size of about 50 nm for (112) peak orientation. SEM images illustrated that the particle size was changed with an increase in the flux of sulfur, which was confirmed with both XRD and AFM images. It was seen that the absorption and energy band gap value of the samples changed the effect of sulfur flux and CZTS film for 40 sccm exhibited more strong absorption all samples in the UV-Vis region. The band gap values of the samples were calculated 1.51, 1.53, 1.82 and 1.91 eV for CZTS (30 sccm), CZTS (40 sccm), CFTS (30 sccm) and CFTS (40 sccm) films annealed H2S gas, respectively.
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