Abstract
InGaP alloy is a very promising material for several applications (BHT transistors, LEDs, etc). Nevertheless, it presents several problems related to the large lattice mismatch between the binary compounds, the formation of an ordered phase (undiserable for device applications) and the surface morphology. In this paper we study the properties of low pressure metalorganic vapour phase epitaxy (LP MOVPE) grown lattice matched GaInP/GaAs heterostructures using atomic force microscopy (AFM), high resolution X-ray diffraction (HRXRD), micro-Raman spectroscopy (μ-R) and micro-photoluminescence (μ-PL). We study the incidence of ordering correcting the compositional changes. The role of the substrate type and the consequences of doping the layers on ordering are discussed.
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