Abstract
Spectral dependences of refractive and absorption indices n( hν), k( hν) ( hν=1.2–4.4 eV) and the transversal Kerr effect δ( hν) ( hν=0.5–4.4 eV) in In(Ga)MnAs layers fabricated by laser deposition have been investigated. Spectra of the diagonal and off-diagonal components of the dielectric permittivity tensor of these layers have been calculated. Comparison of the spectral dependences δ( hν), ε′( hν) and ε′ 2×( hν) 2 of the In(Ga)MnAs layers with similar spectra for MnAs has been carried out. Particular features in the spectra of the In(Ga)MnAs layers have been explained by a competition of contributions of the In 1− x (Ga 1− x )Mn x As host and MnAs inclusions.
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