Abstract
Ten layers of InGaMnAs/GaAs multiquantum wells (MQWs) structure were grown on high resistivity (100) p-type GaAs substrates by molecular beam epitaxy (MBE). A presence of the ferromagnetic structure was confirmed in the InGaMnAs/GaAs MQWs structure, and have ferromagnetic ordering with a Curie temperature, T C=50 K. It is likely that the ferromagnetic exchange coupling of the sample with T C=50 K is hole-mediated resulting in Mn substituting In or Ga sites. PL emission spectra of the InGaMnAs MQWs sample grown at a temperature of 170 °C show that an activation energy of the Mn ion on the first quantum confinement level in InGaAs QW is 32 meV and impurity Mn is partly ionized. The fact that the activation energy of 32 meV of Mn ion in the QW is lower than an activation energy of 110 meV for a substitutional Mn impurity in GaAs, indicating an impurity band existing in the bandgap due to substitutional Mn ions.
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