Abstract
( Ga 1−x Mn x ) As thin films with both semiconducting and magnetic properties were formed by using Mn+ ion implantation and thermal annealing with a goal of producing (Ga1−xMnx)As with a high ferromagnetic transition temperature Tc. Energy dispersive x-ray fluorescence measurements showed that the Mn+-implanted neutron-transmutation-doped (NTD) GaAs samples were (Ga1−xMnx)As thin films, and photoluminescence spectra showed that the annealed (Ga1−xMnx)As thin films were p-type semiconductors. The magnetization curve as a function of the magnetic field showed that ferromagnetism existed in the (Ga1−xMnx)As thin films, and the magnetization curve as a function of the temperature showed that the Tc was ≈140 K. The present results indicate that high-Tc (Ga1−xMnx)As thin films with both semiconducting and magnetic properties can be formed from NTD-GaAs bulks by using Mn+ implantation and annealing method.
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