Abstract
GaN films were doped with Eu to a concentration of ∼0.12at.% during growth at 800°C by molecular beam epitaxy, with the Eu cell temperature held constant at 470°C. All samples were postannealed at 675°C. The films exhibited strong photoluminescence (PL) in the red (622nm) whose absolute intensity was a function of the Ga flux during growth, which ranged from 3.0×10−7to5.4×10−7Torr. The maximum PL intensity was obtained at a Ga flux of 3.6×10−7Torr. The samples showed room temperature ferromagnetism with saturation magnetization of ∼0.1–0.45emu∕cm3, consistent with past reports where the Eu was found to be predominantly occupying substitutional Ga sites. There was an inverse correlation between the PL intensity and the saturation magnetization in the films. X-ray diffraction showed the presence of EuGa phases under all the growth conditions but these cannot account for the observed magnetic properties.
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