Abstract
We fabricate and study direct InP/Si heterojunction by corrugated epitaxial lateral overgrowth (CELOG). The crystalline quality and depth-dependent charge carrier dynamics of InP/Si heterojunction are assessed by characterizing the cross-section of grown layer by low-temperature cathodoluminescence, time-resolved photoluminescence and transmission electron microscopy. Compared to the defective seed InP layer on Si, higher intensity band edge emission in cathodoluminescence spectra and enhanced carrier lifetime of InP are observed above the CELOG InP/Si interface despite large lattice mismatch, which are attributed to the reduced threading dislocation density realized by the CELOG method.
Highlights
Integration of III-V semiconductors on silicon is a major challenge in realizing efficient electronics-photonics integrated devices and systems
We studied monolithically integrated InP/Si heterojunction with high crystalline quality InP and coherent InP/Si interface realized by self-aligned corrugated epitaxial lateral overgrowth (CELOG) method in hydride vapor phase epitaxy (HVPE)
An enhancement of carrier lifetime was observed near the CELOG InP/Si interface with respect to seed layer accounting for its better crystalline quality
Summary
Integration of III-V semiconductors on silicon is a major challenge in realizing efficient electronics-photonics integrated devices and systems. High crystalline quality InP/Si are desired for Si based photonic integrated circuits and tandem solar cell applications. It is not uncommon to find misfit and threading dislocations, stacking faults, microtwins, and antiphase domains in those InP/Si layers All these defects are detrimental to the optical devices made out of InP/Si, since they create deep electronic levels in the band gap, which can act as carrier traps, and non-radiative recombination centers (NRRCs) [7]. Understanding the minority carrier dynamics in InP/Si heterojunction is essential for achieving high performance devices, such as high efficiency solar cells. This study shows that the CELOG method to fabricate direct InP/Si heterojunction is promising for realizing III-V multi-junction solar cells and optical light sources on silicon
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