Optical and ESR spectroscopy of deep defects in III-V semiconductors

Abstract

A survey of recent progress on the assessment of deep defects in GaP, GaAs and, InP by electron spin resonance (ESR) and optical spectroscopy is presented. The stoichiometric defects sofar identified by ESR, the antisite center PGa, and the isolated gallium vacancy are treated in detail. The present understanding of the deep states introduced by oxygen in GaP is reviewed. Besides oxygen the most common, inadvertent deep impurities in III-V compounds are the 3d-transition elements. Their ESR and optical spectra will be discussed, also in connection with their often deleterious influence on device performance.