Optical and Electronic Analysis of Pure and Fe-Doped ZnO Thin Films Using Spectroscopic Ellipsometry and Kramers–Kronig Method

Abstract

In the present work, pure and Fe-doped ZnO thin films were deposited on glass substrates by sol–gel method. Zinc acetate and iron nitrate were used as the starting material and dopant source, respectively. The concentration of Fe doping was 6[Formula: see text]at.% and 8[Formula: see text]at.%. The optical and electronic properties of pure and Fe-doped ZnO thin films such as refraction index, extinction coefficient, dielectric function and optical band gap energy of the layers were obtained by spectroscopic ellipsometry method in the wavelength range of 300–900[Formula: see text]nm. The incidence angle of the layers kept 70[Formula: see text]. Also data obtained by Kramers–Kronig relations were used for comparison. The influence of Fe-doping concentration on the optical and electronic properties of thin films was studied. The transmittance data of ZnO thin films showed that 6[Formula: see text]at.% Fe-doped ZnO thin film has the highest transmittance value. Dielectric function of pure ZnO films was found to be higher compared with Fe-doped ones. Also it can be deduced from the results that Fe doping influences the optical band gap energy of thin films.