Abstract
A sol-gel-combustion reaction approach is used to synthesize nanocrystalline, single-phase ZnSnO3 phosphor. XRD with the Rietveld refinement investigation reveals a previously unreported orthorhombic structure of ZnSnO3. FTIR analysis confirms the formation of the ZnSnO3 phase. Microstructural SEM and TEM examinations affirm the petal-like morphology of the ZnSnO3 nanostructure. UV-DRS analysis signifies ZnSnO3 as a semiconducting material with a lowest energy band gap of 2.94 eV, which has never been recorded before. Photoluminescence (PL) studies reveal defect-related emission in ZnSnO3. Cyclic voltammetry measurements confirm the redox process and photo-generated carrier recombination via defect levels. ZnSnO3 is identified as a p-type semiconductor by Mott-Schottky analysis. When irradiated with 397 nm UV light, the semiconducting nanostructures emit near-white light. Finally, the investigation of ZnSnO3 nanopowder for latent fingerprint impressions reveals an unusual diffuse reflection and high-resolution images under a sodium vapour lamp and LASER-LED illumination.
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