Abstract
In this chapter, we perform a detailed analysis of the optical and electrical properties of GaAs nanowire (NW) over Ge bottom cell, which is significantly influenced by the structural morphology of the NWs. This necessitates the need for geometric optimization of the NWs to enhance the performance metrics of the solar cells. The absorption efficiency per unit volume over traditional bulk and thin-film counterpart are much improved due to the intrinsic antireflection, strong excitation of resonance modes, and optical antenna effects. We show that the diameter optimization of GaAs NW for a fixed D to P ratio of 0.5 resulted in an ideal short circuit current density of 42.32 mA/cm2 with the help of 3D Finite Difference Time Domain method under standard AM 1.5G illumination. The optimized photogeneration profile is then imported to the DEVICE Module for electrical simulation resulting in a PCE of 18.61%, which is significantly higher than its planar counterpart.
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