Abstract
The ZnO thin films have been produced on p-type Si and quartz substrates by the spin-coating method and after deposition were heated at different temperatures in the range from 650K to 850K. The photoluminescence (PL) and cathodoluminescence (CL) measurements were carried out at temperature range 12K-350K. I-V, C-V measurements were performed on the Al/ZnO/Si/Al structures at different temperatures. The structural properties of the ZnO thin films were carried out using x-ray and SEM method. The effects of the thickness variation and annealing temperature on the crystallinity parameters were observed. The electrical response of grains, grain boundaries, and contacts of the ZnO film was obtained.
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