Abstract
The paper presents studies of optical and electrical properties of SnS1−xSex (x = 0.26–0.31) thin films deposited on glass substrates using thermal co-evaporation technique at different substrate temperatures, 200 °C–350 °C. The as-deposited films were characterized by the energy dispersive spectroscopy, X-ray diffractometry, scanning electron microscopy, optical transmission and reflection spectroscopy, four-probe resistivity and photoconductance measurements. The results have shown that deposited films can be used as absorber layers in thin film solar cell applications, and the optimal substrate temperature for the deposition is 300 °C.
Highlights
September 2019Optical and electrical properties of thermally co-evaporated SnS1−xSex alloy films. K Saritha , S Rasool , K T Ramakrishna Reddy, M S Tivanov, A M Saad, A V Trofimova and V F Gremenok
For several decades, a variety of metal chalcogenide semiconductors were studied and investigated for solar cell applications, but only few are identified as better materials for photo conversion process
In case of SnS1−xSex films grown at higher substrate temperatures, a rapid reaction of Se vapour with SnS led to the formation of SnS1−xSex phase by replacing S with Se
Summary
Optical and electrical properties of thermally co-evaporated SnS1−xSex alloy films. K Saritha , S Rasool , K T Ramakrishna Reddy, M S Tivanov, A M Saad, A V Trofimova and V F Gremenok.
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