Abstract
Tantalum pentoxide is of interest as an alternative dielectric to SiO 2 for MOS devices. In the present work, RF-sputtered tantalum films on silicon substrates were thermally oxidized at 500°C. Ellipso-metric measurements showed that films made in this way were uniform in refractive index except for a narrow region of tapered index at the silicon interface. Capacitance measurements gave a relative permittivity of about 26, in the range shown by anodic Ta 2 O 5 films. The conduction currents depended on the oxidation period but were comparable to or slightly better than reported for CVD Ta 2 O 5 .
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