Optical and Electrical Properties of the films of ALTiO2 prepared by Magnetron Sputtering

Abstract

In the present work, ALTiO2 thin films were deposit On a glass substrate by using a DC magnetron sputtering at varying currents (170,180,200) mA. The thickness of ALTiO2 thin films was calculated using an optical interferometer system that used a He-Ne laser with a wavelength λ of (632.8)nm. The thickness of the thin films was (340,162,129) nm. UV-Vis spectroscopy was used to investigate optical properties. The wavelength spectrum between (300 -1000)nm was used to record the absorption and transmittance spectra of ALTiO2 thin films. With increasing thickness and currents, the optical band gap decreases from (3.2 to 1.9) ev. The electrical properties indicate that as the ALTiO2 film thickness increases (340,162,129) nm respectively (1.19 to 9.84) the resistivity decreases