Optical and electrical properties of Si doped polar and nonpolar GaN

Abstract

We investigated the optical and electrical properties of Si-doped polar (c-plane) and nonpolar (a-plane) GaN layers grown by metal-organic vapor phase epitaxy (MOVPE) using photoluminescence (PL) and Hall-effect measurements. For c-plane GaN, the dominant emission bands were related to band-acceptor and donor-acceptor transitions, and mobility was dominated by optical phonon and ionized impurity scattering at high and low temperature, respectively. For a-plane GaN, the dominant emission bands were related to extended defects such as basal stacking faults (BSFs) and prismatic stacking faults (PSFs) and mobility was dominated by the scattering mechanism due to dislocations.