Abstract
In this paper, the high quality p-type nitrogen-doped ZnO film was prepared by use of post-treated by plasma-enhanced chemical vapor deposition. The p-type ZnO with the hole density of 2.2×1016was obtained. The converting from n-type to p-type was observed, which was obvious on the analysis of the optical and electrical properties of the p-type ZnO. Nitrogen was incorporated into ZnO film during the treatment process to occupy the oxygen positions, and also partly compensated some donor defects. When the amount of activated nitrogen exceeded those donor states to realize an effective compensation, the transformation from n-type to p-type happened.
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