Abstract
P-type zinc oxide (ZnO) thin films were synthesized by ion beam assisted deposition and their optical and electrical properties were investigated. It was found that after annealing at 400 °C, the transmittance of ZnO films became higher than that of the as-deposited films. Hall measurements indicated that ZnO films were p-type and the highest carrier concentration of 2.17 × 10 17 cm - 3 and mobility of 3.51 cm 2/V·s were obtained. Photoconductivity of the p-type ZnO films was also investigated and the conductivity of the films under ultraviolet illumination is about 600 times larger than that in the dark.
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