Abstract
Application of a nano-crystalline GaN to thin-film transistors is demonstrated. Two types of TFT structures, a bottom gate type and a top gate type, are examined. The field effect mobilities of the former and the latter type TFTs were 6×10−2 and 19cm2/Vs, respectively. There results are explained by the high-volume fraction of nano-crystal and the small deep gap state density at the free surface of nano-crystalline films from experimental results of structural, optical and electrical measurements. It is demonstrated that the nc-GaN TFT performance is not influenced by white light irradiation of 1.2mW/cm2 except for a slight increase in the off-current.
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